The Design of a 220GHz Doubler Using Planar Schottky Diode

被引：0
|
作者：
Min, Yingcun [1 ]
Zhang, Bo [1 ]
Fan, Yong [1 ]
机构：
[1] Univ Elect Sci & Technol China, EHF Key Lab Fundamental Sci, Chengdu 611731, Peoples R China
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2016年
关键词：
terahertz doubler; planar Schottky diode; quartz substrate;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present the design of a 220GHz doubler realized by planar Schottky diodes. The complete multiplying circuit and diodes is mounted on 50um thick quartz substrate. Simulation result shows that output power is achieved 20mW in the range from 212GHz to 230GHz with a constantly 150mW driven power across the band. The peak power is 61.5mW in 221.2GHz with almost 40.6% efficiency.
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页数：3
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