Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 μm grown by molecular beam epitaxy

被引：5

作者：

Ni, H. Q. ^{[1
]}

Niu, Z. C. ^{[1
]}

Fang, Z. D. ^{[1
]}

Huang, S. S. ^{[1
]}

Zhang, S. Y. ^{[1
]}

Wu, D. H. ^{[1
]}

Shun, Z. ^{[1
]}

Han, Q. ^{[1
]}

Wu, R. H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

基金：

中国国家自然科学基金;

关键词：

quantum wells; laser;

D O I：

10.1016/j.jcrysgro.2006.11.172

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：125 / 128

页数：4

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