Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs

被引：172
|
作者：
Sopanen, M [1 ]
Xin, HP
Tu, CW
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] Aalto Univ, Optoelect Lab, FIN-02150 Espoo, Finland
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期
关键词：
D O I：
10.1063/1.125917
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ga0.3In0.7NxAs1-x (x less than or equal to 0.04) and InNxAs1-x (x less than or equal to 0.02) self-assembled quantum dots are fabricated on GaAs by gas-source molecular beam epitaxy. The effect of growth temperature on island density, island size, and optical properties is studied in detail. From a single layer of Ga0.3In0.7N0.04As0.96 dots embedded in GaAs, peak photoluminescence wavelength of up to 1.52 mu m is detected at room temperature. Thus, the fabrication of 1.3 and 1.55 mu m GaInNAs quantum dot lasers on GaAs becomes feasible. (C) 2000 American Institute of Physics. [S0003-6951(00)02708-X].
引用
收藏
页码：994 / 996
页数：3
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