Measurement of electro-optic coefficients of 1.3 μm self-assembled InAs/GaAs quantum dots

被引：6
|
作者：
Tatebayashi, J. [1 ]
Laghumavarapu, R. B. [1 ]
Nuntawong, N. [1 ]
Huffaker, D. L. [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87110 USA
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 07期
关键词：
D O I：
10.1049/el:20070245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electro-optic properties of 1.3 mu m self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4 x 10(-11) m/V and 3.2 x 10(-18) m(2)/V-2, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niobate.
引用
收藏
页码：410 / 412
页数：3
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