Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM

被引：0

作者：

Chen, Wangyong ^{[1
]}

Cai, Linlin ^{[1
]}

Wang, Kunliang ^{[1
]}

Zhang, Xing ^{[1
,2
]}

Liu, Xiaoyan ^{[1
]}

Du, Gang ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

来源：

2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2018年

关键词：

self-heating effect; Nanosheet-FETs; SRAM; HCI degradation; variability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.

引用

页数：4

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