Self-heating induced Variability and Reliability in Nanosheet-FETs Based SRAM

被引：0
|
作者：
Chen, Wangyong [1 ]
Cai, Linlin [1 ]
Wang, Kunliang [1 ]
Zhang, Xing [1 ,2 ]
Liu, Xiaoyan [1 ]
Du, Gang [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China
来源：
2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2018年
关键词：
self-heating effect; Nanosheet-FETs; SRAM; HCI degradation; variability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a new methodology is proposed to investigate variability and reliability correlated with self-heating effect (SHE) in digital circuits during random operation. In this methodology, the arbitrary power waveform (APW) self-heating model is applied to carry out self-heating evaluation with the input sequences generated by the power waveform generator (PWG). Based on the proposed method, self-heating induced variability and HCI degradation in Nanosheet-FETs based SRAM are investigated. The results show it is essential to take the self-heating variation into account for circuit design and reliability prediction.
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页数：4
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