A new poly-Si thin-film transistor with poly-Si/a-Si double active layer

被引：4
|
作者：
Park, KC [1 ]
Choi, KY
Yoo, JS
Han, MK
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Samsung Elect Co, LCD R&D Grp, Kyungki Do 449900, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 10期
关键词：
crystallization depth control; current path; poly-Si/a-Si; poly-Si TFTs; stability;
D O I：
10.1109/55.870610
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new poly-Si TFT employing a rather thick poly-Si (400 Angstrom)/a-Si(4000 Angstrom) double active layer is proposed and fabricated in order to improve the stability of poly-Si TFT without sacrificing the on/off current ratio. Due to the thick double layer, the on-state drain current of the proposed TFT flows through a broad current path near the drain junction so that the current density in the drain depletion region where large electric field is applied is considerably reduced. Consequently, additional trap state generation attributed to large current flow and large electric field in poly-Si channel decreases and the electrical stability of the proposed device has been considerably improved.
引用
收藏
页码：488 / 490
页数：3
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