Performance Analysis of Dielectric Engineered Negative Capacitance Tunnel FETs

被引：0
|
作者：
Harikumar, K. R. [1 ]
Das, Midhun P. [1 ]
Shikha, U. S. [1 ]
James, Rekha K. [1 ]
Pradeep, Anju [1 ]
机构：
[1] CUSAT, Sch Engn, Kochi, Kerala, India
来源：
2022 IEEE 3RD INTERNATIONAL CONFERENCE ON VLSI SYSTEMS, ARCHITECTURE, TECHNOLOGY AND APPLICATIONS, VLSI SATA | 2022年
关键词：
Double Gate; Negative Capacitance; Dielectric Engineering; Tunnel Field Effect Transistor;
D O I：
10.1109/VLSISATA54927.2022.10046624
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
The ability to amplify the gate voltage exists in ferroelectric (FE) materials in the negative capacitance (NC) domain. A simulation-based study of NC TFETs which has Si doped HfO2 as the FE material is included in this paper. A comparative study between low-k, high-k and combination of high-k over low-k is presented here to analyze the performance metrics such as ON current, subthreshold swing (SS) and ON-OFF current ratio. The numerical simulation is performed by combining one-dimensional (1-D) Landau-Khalatnikov (LK) equation and two-dimensional (2-D) TCAD. Based on published earlier studies, this study examines the idea of NC in TFET.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Comparative Analysis of Dielectric Engineered Tunnel FET for Biosensing Applications
    Jorga, Solomon Kebede
    Singh, Avtar
    Tekilu, Dereje
    SILICON, 2023, 15 (03) : 1401 - 1411
  • [42] Comparative Analysis of Dielectric Engineered Tunnel FET for Biosensing Applications
    Solomon Kebede Jorga
    Avtar Singh
    Dereje Tekilu
    Silicon, 2023, 15 : 1401 - 1411
  • [43] The Dual Effects of Gate Dielectric Constant in Tunnel FETs
    Wang, Hao
    Chang, Sheng
    He, Jin
    Huang, Qijun
    Liu, Feng
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016, 4 (06): : 445 - 450
  • [44] Perspectives on Dielectric Modulated Biosensing in Silicon Tunnel FETs
    Mehta, Manan
    Goswami, Rupam
    SILICON, 2022, 14 (04) : 1851 - 1858
  • [45] Circuit Performance Analysis of Negative Capacitance FinFETs
    Khandelwal, S.
    Khan, A. I.
    Duarte, J. P.
    Sachid, A. B.
    Salahuddin, S.
    Hu, C.
    2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2016,
  • [46] Perspectives on Dielectric Modulated Biosensing in Silicon Tunnel FETs
    Manan Mehta
    Rupam Goswami
    Silicon, 2022, 14 : 1851 - 1858
  • [47] Ferroelectric Al:HfO2 Negative Capacitance FETs
    Lee, M. H.
    Chen, P. -G.
    Fan, S. -T.
    Chou, Y. -C.
    Kuo, C. -Y.
    Tang, C. -H.
    Chen, H. -H.
    Gu, S. -S.
    Hong, R. -C.
    Wang, Z. -Y.
    Chen, S. -Y.
    Liao, C. -Y.
    Chen, K. -T.
    Chang, S. T.
    Liao, M. -H.
    Li, K. -S.
    Liu, C. W.
    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
  • [48] Deep Insights into Dielectric Breakdown in Tunnel FETs with Awareness of Reliability and Performance Co-Optimization
    Huang, Qianqian
    Jia, Rundong
    Zhu, Jiadi
    Lv, Zhu
    Wang, Jiaxin
    Chen, Cheng
    Zhao, Yang
    Wang, Runsheng
    Bu, Weihai
    Wang, Wenbo
    Kang, Jin
    Hua, Kelu
    Wu, Hanming
    Yu, Shaofeng
    Wang, Yangyuan
    Huang, Ru
    2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [49] Performance Evaluation of InGaAs Dielectric Engineered Tunnel Field-Effect Transistors
    Azam, S. M. Tariful
    Bakibillah, A. S. M.
    Kamal, M. A. S.
    JOURNAL OF NANO RESEARCH, 2019, 59 : 149 - 160
  • [50] Negative capacitance FETs for energy efficient and hardware secure logic designs
    Bheemana, Renuka Chowdary
    Japa, Aditya
    Yellampalli, Siva Sankar
    Vaddi, Ramesh
    Microelectronics Journal, 2022, 119
12345