Long-Wavelength BTJ-VCSELs with improved Modulation Bandwidth and Temperature Range

被引：0
|
作者：
Hofmann, W. [1 ]
Mueller, M. [1 ]
Boehm, G. [1 ]
Rosskopf, J. [2 ]
Amann, M. -C. [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 3, D-85748 Garching, Germany
[2] VERTILAS GmbH, D-85748 Garching, Germany
来源：
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP-based, long-wavelength VCSELs utilizing a buried tunnel junction (BTJ), emitting at 1.55 mu m with improved active region and reduced parasitics are demonstrated. A superior modulation-bandwidth >10 GHz is achieved up to 85 degrees C. Potential bit-rates of 12.5 or even 17 Gb/s are feasible for cost-effective 100G Ethernet solutions at metro-range. (C) 2009 Optical Society of America
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页码：437 / +
页数：2
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