Long-Wavelength BTJ-VCSELs with improved Modulation Bandwidth and Temperature Range

被引:0
|
作者
Hofmann, W. [1 ]
Mueller, M. [1 ]
Boehm, G. [1 ]
Rosskopf, J. [2 ]
Amann, M. -C. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 3, D-85748 Garching, Germany
[2] VERTILAS GmbH, D-85748 Garching, Germany
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
InP-based, long-wavelength VCSELs utilizing a buried tunnel junction (BTJ), emitting at 1.55 mu m with improved active region and reduced parasitics are demonstrated. A superior modulation-bandwidth >10 GHz is achieved up to 85 degrees C. Potential bit-rates of 12.5 or even 17 Gb/s are feasible for cost-effective 100G Ethernet solutions at metro-range. (C) 2009 Optical Society of America
引用
收藏
页码:437 / +
页数:2
相关论文
共 50 条
  • [21] Polarization mode control of long-wavelength VCSELs by intracavity patterning
    Long, C. M.
    Mickovic, Z.
    Dwir, B.
    Caliman, A.
    Iakovlev, V.
    Mereuta, A.
    Sirbu, A.
    Kapon, E.
    OPTICS EXPRESS, 2016, 24 (09): : 9715 - 9722
  • [22] Tunable long-wavelength VCSELs using a moveable mirror membrane
    Meissner, P
    Kögel, B
    Riemenschneider, F
    Halbritter, H
    Jatta, S
    Maute, M
    Amann, MC
    2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 324 - 325
  • [23] Wafer fused Long-Wavelength VCSELs for Analog Photonics Applications
    Belkin, Mikhail E.
    Iakovlev, Vladimir
    2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2016,
  • [24] GaAsSb/GaAs new materials for long-wavelength VCSELs application
    Sugou, S
    Anan, T
    Yamada, M
    Nishi, K
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 355 - 358
  • [25] Photonic crystals for long-wavelength single-mode VCSELs
    Ronistad, F.
    Bischoff, S.
    Juhl, M.
    Jacobsen, S.
    Birkedal, D.
    VERTICAL-CAVITY SURFACE-EMITTING LASERS XII, 2008, 6908
  • [26] Wafer fused long-wavelength VCSELs with inpbased active cavities
    Syrbu, A
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 670 - 674
  • [27] Polarization Switching Regions of Optically Injected Long-Wavelength VCSELs
    Quirce, Ana
    Perez, Pablo
    Lin, Hong
    Valle, Angel
    Pesquera, Luis
    Panajotov, Krassimir
    Thienpont, Hugo
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (11) : 921 - 928
  • [28] Electrical Modeling of Long-Wavelength VCSELs for Intrinsic Parameters Extraction
    Bacou, Alexandre
    Hayat, Ahmad
    Iakovlev, Vladimir
    Syrbu, Alexei
    Rissons, Angelique
    Mollier, Jean-Claude
    Kapon, Eli
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (03) : 313 - 322
  • [29] InP-Based Long-Wavelength VCSELs and VCSEL Arrays
    Amann, Markus-Christian
    Hofmann, Werner
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 861 - 868
  • [30] Long-wavelength VCSELs: The case for all-epitaxial approaches
    Coldren, LA
    2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, : 1 - 2