Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors

被引:3
|
作者
Karmiotis, Y [1 ]
Nestoros, M [1 ]
Christofides, C [1 ]
机构
[1] Univ Cyprus, Fac Pure & Appl Sci, Dept Nat Sci, CY-1678 Nicosia, Cyprus
关键词
Calculations - Charge carriers - Crystalline materials - Diffusion - Energy gap - Light emission - Numerical analysis - Photons - Semiconducting gallium arsenide - Semiconducting germanium - Silicon wafers - Thin films;
D O I
10.1063/1.120848
中图分类号
O59 [应用物理学];
学科分类号
摘要
A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists. (C) 1998 American Institute of Physics.
引用
收藏
页码:695 / 697
页数:3
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