Semi-infinite photocarrier radiometric model for the characterization of semiconductor wafer

被引：1
|
作者：
Liu, Xianming [1 ]
Li, Bincheng [1 ]
Huang, Qiuping [1 ]
机构：
[1] Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
来源：
15TH INTERNATIONAL CONFERENCE ON PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA (ICPPP15) | 2010年 / 214卷
关键词：
D O I：
10.1088/1742-6596/214/1/012115
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The analytical expression is derived to describe the photocarrier radiometric (PCR) signal for a semi-infinite semiconductor wafer excited by a square-wave modulated laser. For comparative study, the PCR signals are calculated by the semi-infinite model and the finite thickness model with several thicknesses. The fitted errors of the electronic transport properties by semi-infinite model are analyzed. From these results it is evident that for thick samples or at high modulation frequency, the semiconductor can be considered as semi-infinite.
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页数：4
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