Semi-infinite photocarrier radiometric model for the characterization of semiconductor wafer

The analytical expression is derived to describe the photocarrier radiometric (PCR) signal for a semi-infinite semiconductor wafer excited by a square-wave modulated laser. For comparative study, the PCR signals are calculated by the semi-infinite model and the finite thickness model with several thicknesses. The fitted errors of the electronic transport properties by semi-infinite model are analyzed. From these results it is evident that for thick samples or at high modulation frequency, the semiconductor can be considered as semi-infinite.