Enhancement mode high mobility n-MOSFET on gallium arsenide substrate

被引：1
|
作者：
Rajagopalan, K. [1 ]
Abrokwah, J. [1 ]
Droopad, R. [1 ]
Passlack, M. [1 ]
机构：
[1] Freescale Semicond, 2100 E Elliott Rd, Chandler, AZ 85226 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-K dielectric stack (kappa approximate to 20) comprising of gallium oxide and gadolinium gallium oxide have been fabricated. Mobilities exceeding 12,000 and 6,000 cm(2)/Vs, for sheet carrier concentration n(S) of about 2.5x10(12) cm(2) were measured from InP and GaAs based MOSFET structures, respectively. These structures were designed for enhancement mode operation and include a 10 am thick strained InxGal-xAs channel layer with In mole fraction x of 0.3 and 0.75 on GaAs and InP substrates, respectively. NMOSFETs with a gate length of 1 mu m and a source-drain spacing of 3 mu m were fabricated. These devices show a threshold voltage of 0.11 V. The saturation current, transconductance and on-resistance were measured to be 380 mA/mm, 250 mS/mm, 4.5 Omega-mm. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1671 / +
页数：2
相关论文
共 50 条
  • [1] TID and SEE Hardened n-MOSFET Layout on a Bulk Silicon Substrate which Combines a DGA n-MOSFET and a Guard Drain
    Roh, Young Tak
    Lee, Hee Chul
    [J]. 2015 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2015,
  • [2] A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
    Banqueri, J
    LopezVillanueva, JA
    Gamiz, F
    Carceller, JE
    LoraTamayo, E
    Lozano, M
    [J]. SOLID-STATE ELECTRONICS, 1996, 39 (06) : 875 - 883
  • [3] Study on hot carrier effects on N-MOSFET's under high substrate impurity concentration
    Toshiba Corp, Kawasaki, Japan
    [J]. IEEE Trans Electron Devices, 8 (1510-1521):
  • [4] Effective mobility in heavily doped n-MOSFET's: Measurements and models
    Villa, S
    Lacaita, AL
    Perron, L
    Bez, R
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 395 - 398
  • [5] EPITAXIAL GALLIUM ARSENIDE FILMS WITH A HIGH ELECTRON MOBILITY
    RZHANOV, AV
    LISENKER, BS
    MARONCHU.IE
    MARONCHU.YE
    SHERSTYA.AP
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 593 - &
  • [6] MOBILITY AND INFRARED ABSORPTION IN N-TYPE GALLIUM ARSENIDE
    PERKOWITZ, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3751 - +
  • [7] N-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
    Chui, King-Jien
    Ang, Kah-Wee
    Balasubramanian, Narayanan
    Li, Ming-Fu
    Samudra, Ganesh S.
    Yeo, Yee-Chia
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (02) : 249 - 256
  • [8] SHALLOW DONOR LEVELS AND HIGH MOBILITY IN EPITAXIAL GALLIUM ARSENIDE
    WHITAKER, J
    BOLGER, DE
    [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (04) : 181 - &
  • [9] Inversion layer effective mobility model for pocket implanted nano scale n-MOSFET
    Bhuyan, Muhibul Haque
    Khosru, Quazi D. M.
    [J]. World Academy of Science, Engineering and Technology, 2011, 73 : 65 - 72
  • [10] On the accuracy and efficiency of substrate current calculations for sub-μm n-MOSFET's
    Fujitsu Ltd, Kawasaki, Japan
    [J]. IEEE Electron Device Lett, 10 (464-466):
12345