共 50 条
- [1] INVESTIGATION OF INFRARED ABSORPTION SPECTRUM OF N-TYPE GALLIUM ARSENIDE [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2784 - +
- [2] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
- [5] Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (02): : 281 - 297
- [6] RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 183 - &
- [7] NEGATIVE MAGNETORESISTANCE OF N-TYPE GALLIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 1169 - +
- [8] POLARITONS IN N-TYPE GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 84 - 85
- [9] Indium diffusion in n-type gallium arsenide [J]. APPLIED PHYSICS LETTERS, 1997, 70 (25) : 3392 - 3394
- [10] SURFACE MEASUREMENTS ON N-TYPE GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1963, 6 (02): : 133 - 135