Enhancement mode high mobility n-MOSFET on gallium arsenide substrate

被引：1
|
作者：
Rajagopalan, K. [1 ]
Abrokwah, J. [1 ]
Droopad, R. [1 ]
Passlack, M. [1 ]
机构：
[1] Freescale Semicond, 2100 E Elliott Rd, Chandler, AZ 85226 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-K dielectric stack (kappa approximate to 20) comprising of gallium oxide and gadolinium gallium oxide have been fabricated. Mobilities exceeding 12,000 and 6,000 cm(2)/Vs, for sheet carrier concentration n(S) of about 2.5x10(12) cm(2) were measured from InP and GaAs based MOSFET structures, respectively. These structures were designed for enhancement mode operation and include a 10 am thick strained InxGal-xAs channel layer with In mole fraction x of 0.3 and 0.75 on GaAs and InP substrates, respectively. NMOSFETs with a gate length of 1 mu m and a source-drain spacing of 3 mu m were fabricated. These devices show a threshold voltage of 0.11 V. The saturation current, transconductance and on-resistance were measured to be 380 mA/mm, 250 mS/mm, 4.5 Omega-mm. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1671 / +
页数：2
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