Thermodynamic behaviors of excitonic emission in ZnO nanorods grown by pulsed laser deposition

被引:7
|
作者
Lee, Youngmin [1 ]
Lee, Dong Jin [1 ]
Cho, Hak Dong [1 ]
Yoon, Im Taek [1 ]
Shon, Yoon [1 ]
Lee, Sejoon [1 ,2 ]
机构
[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 04623, South Korea
[2] Dongguk Univ Seoul, Dept Semicond Sci, Seoul 04623, South Korea
基金
新加坡国家研究基金会;
关键词
Zinc oxide; Nanorod; Pulsed laser deposition; Temperature-dependent photoluminescence; Exciton emission; Exciton-phonon interaction; LIGHT-EMITTING DIODE; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; FILMS; NANOSTRUCTURES; LAYERS;
D O I
10.1016/j.jlumin.2017.05.072
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigated the thermodynamic behaviors of the exciton emission in ZnO nanorods that had been grown by laser ablation. The ZnO nanorods exhibited a clear luminescence peak from the neutral donor-bound exciton ((DX)-X-0), which persisted near room temperature. Through analyzing temperature-dependences of photoluminescence properties, we found out insignificant thermal-quenching of (DX)-X-0, arising from the large donor binding energy (i.e., E-bD(NR) similar to 51.1 +/- 7.3 meV). A small discrepancy of E-bD(NR) from ZnO bulks' values (i.e., E-bD(Bulk) = 53 - 72 meV) is associated with inhomogeneous thermal-broadening factors such as defect-scattering at the surface of the nanorod. Despite of inhomogeneous thermal-broadening, the ZnO nanorods still have a high luminescence efficiency because of the weak homogeneous thermal-broadening effect (i.e., low exciton-phonon coupling).
引用
收藏
页码:314 / 318
页数:5
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