Thermodynamic behaviors of excitonic emission in ZnO nanorods grown by pulsed laser deposition

被引:7
|
作者
Lee, Youngmin [1 ]
Lee, Dong Jin [1 ]
Cho, Hak Dong [1 ]
Yoon, Im Taek [1 ]
Shon, Yoon [1 ]
Lee, Sejoon [1 ,2 ]
机构
[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 04623, South Korea
[2] Dongguk Univ Seoul, Dept Semicond Sci, Seoul 04623, South Korea
基金
新加坡国家研究基金会;
关键词
Zinc oxide; Nanorod; Pulsed laser deposition; Temperature-dependent photoluminescence; Exciton emission; Exciton-phonon interaction; LIGHT-EMITTING DIODE; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; FILMS; NANOSTRUCTURES; LAYERS;
D O I
10.1016/j.jlumin.2017.05.072
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigated the thermodynamic behaviors of the exciton emission in ZnO nanorods that had been grown by laser ablation. The ZnO nanorods exhibited a clear luminescence peak from the neutral donor-bound exciton ((DX)-X-0), which persisted near room temperature. Through analyzing temperature-dependences of photoluminescence properties, we found out insignificant thermal-quenching of (DX)-X-0, arising from the large donor binding energy (i.e., E-bD(NR) similar to 51.1 +/- 7.3 meV). A small discrepancy of E-bD(NR) from ZnO bulks' values (i.e., E-bD(Bulk) = 53 - 72 meV) is associated with inhomogeneous thermal-broadening factors such as defect-scattering at the surface of the nanorod. Despite of inhomogeneous thermal-broadening, the ZnO nanorods still have a high luminescence efficiency because of the weak homogeneous thermal-broadening effect (i.e., low exciton-phonon coupling).
引用
收藏
页码:314 / 318
页数:5
相关论文
共 50 条
  • [31] Photoconductive properties of ZnO thin films grown by pulsed laser deposition
    Zheng, X. G.
    Li, Q. Sh.
    Hu, W.
    Chen, D.
    Zhang, N.
    Shi, M. J.
    Wang, J. J.
    Zhang, L. Ch.
    JOURNAL OF LUMINESCENCE, 2007, 122 : 198 - 201
  • [32] Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition
    Kim, Jae-Hoon
    Song, Hooyoung
    Kim, Eun Kyu
    MICROELECTRONICS JOURNAL, 2009, 40 (02) : 283 - 285
  • [33] Growth and Characterization of ZnO thin Films Grown by Pulsed Laser Deposition
    He, Jianting
    Tan, Boxue
    Wei, Qinqin
    Su, Yuanbin
    Yang, Shulian
    MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8, 2012, 383-390 : 6289 - 6292
  • [34] Variable band gap ZnO nanostructures grown by pulsed laser deposition
    Kukreja, LM
    Barik, S
    Misra, P
    JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) : 531 - 535
  • [35] Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition
    Shkurmanov, Alexander
    Sturm, Chris
    Hochmuth, Holger
    Grundmann, Marius
    PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016, 2016, 168 : 1156 - 1159
  • [36] Highly conductive ZnO grown by pulsed laser deposition in pure Ar
    Scott, Robin C.
    Leedy, Kevin D.
    Bayraktaroglu, Burhan
    Look, David C.
    Zhang, Yong-Hang
    APPLIED PHYSICS LETTERS, 2010, 97 (07)
  • [37] Growth and characterization of ZnO thin films grown by pulsed laser deposition
    Bae, SH
    Lee, SY
    Jin, BJ
    Im, S
    APPLIED SURFACE SCIENCE, 2001, 169 : 525 - 528
  • [38] Unique photoluminescence from ZnO grown by eclipse pulsed laser deposition
    Mendelsberg, R. J.
    Kennedy, J. V.
    Durbin, S. M.
    Reeves, R. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03): : 1698 - 1704
  • [39] Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
    Lange, M.
    Dietrich, C. P.
    Benndorf, G.
    Lorenz, M.
    Zuniga-Perez, J.
    Grundmann, M.
    JOURNAL OF CRYSTAL GROWTH, 2011, 328 (01) : 13 - 17
  • [40] Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition
    Chen, ZQ
    Yamamoto, S
    Kawasuso, A
    Xu, Y
    Sekiguchi, T
    APPLIED SURFACE SCIENCE, 2005, 244 (1-4) : 377 - 380