Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors

被引：70
|
作者：
Alì, G
Bini, D
Rionero, S
机构：
[1] CNR, Inst Appl Math, I-80131 Naples, Italy
[2] Univ Naples Federico 2, Dipartimento Matemat, I-80126 Naples, Italy
来源：
SIAM JOURNAL ON MATHEMATICAL ANALYSIS | 2000年 / 32卷 / 03期
关键词：
Euler-Poisson; semiconductors; asymptotic behavior; smooth solutions;
D O I：
10.1137/S0036141099355174
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
We establish the global existence of smooth solutions of the Cauchy problem for the one-dimensional Euler Poisson model for semiconductors, under the assumption that the initial data are perturbations of a stationary solution of the drift-diffusion equations. The resulting evolutionary solutions converge asymptotically in time to the unperturbed state.
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页码：572 / 587
页数：16
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