Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors

被引：70

作者：

Alì, G

Bini, D

Rionero, S

机构：

[1] CNR, Inst Appl Math, I-80131 Naples, Italy

[2] Univ Naples Federico 2, Dipartimento Matemat, I-80126 Naples, Italy

来源：

SIAM JOURNAL ON MATHEMATICAL ANALYSIS | 2000年 / 32卷 / 03期

关键词：

Euler-Poisson; semiconductors; asymptotic behavior; smooth solutions;

D O I：

10.1137/S0036141099355174

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We establish the global existence of smooth solutions of the Cauchy problem for the one-dimensional Euler Poisson model for semiconductors, under the assumption that the initial data are perturbations of a stationary solution of the drift-diffusion equations. The resulting evolutionary solutions converge asymptotically in time to the unperturbed state.

引用

页码：572 / 587

页数：16

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