Effect of nitrogen on electrical and physical properties of polyatomic layer chemical vapor deposition HfSxOy gate dielectrics

被引：13

作者：

Punchaipetch, P

Okamoto, T

Nakamura, H

Uraoka, Y

Fuyuki, T

Horii, S

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Hitachi Kokusai Elect Inc, Semicond Equipment Syst Lab, Toyama 9392393, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 11B期

关键词：

Hf silicate; nitride Hf silicate; high-kappa gate oxides; polyatomic layer chemical vapor deposition method;

D O I：

10.1143/JJAP.43.7815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of nitrogen incorporation on polyatomic layer chemical vapor deposition (PLCVD) hafnium silicate (HfSixOy) films was investigated. The physical and electrical properties of nitride hafnium silicate (HfSixOyNz) and HfSixOy dielectric films are reported. X-ray photoelectron spectroscopy (XPS) was used to check chemical compositions, nitrogen profile, band gap, and band offset of the HfSixOy and HfSixOyNz films. The nitrogen incorporation results in decreases in the band gap and band offset of the HfSixOy sample. The nitrogen profile obtained by secondary ion mass spectroscopy (SIMS) shows a gradient decrease from the surface to the interface. The prepared HfSixOy and HfSixOyNz films have reasonable electrical performance.

引用

页码：7815 / 7820

页数：6

共 50 条

[41] Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics
Ramani, K.
Essary, C. R.
Son, S. Y.
Craciun, V.
Singh, R. K.
APPLIED PHYSICS LETTERS, 2006, 89 (24)
[42] The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition
VanderStricht, W
Moerman, I
Demeester, P
Crawley, JA
Thrush, EJ
Middleton, PG
Cowan, CT
ODonnell, KP
GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 231 - 236
[43] Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition
Kim, Seokhoon
Woo, Sanghyun
Hong, Hyungseok
Kim, Hyungchul
Jeon, Hyeongtag
Bae, Choelhwyi
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) : H97 - H101
[44] Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition
Soga, T.
Suzuki, T.
Mori, M.
Jiang, Z.K.
Jimbo, T.
Umeno, M.
Journal of Crystal Growth, 1993, 132 (3-4): : 414 - 418
[45] Growth and electrical properties of AlOx grown by mist chemical vapor deposition
Kawaharamura, Toshiyuki
Uchida, Takayuki
Sanada, Masaru
Furuta, Mamoru
AIP ADVANCES, 2013, 3 (03):
[46] Laser chemical vapor deposition of nanometric structures and their electrical and optical properties
Mulenko, SA
Brodyn, MS
Gayvoronsky, VY
INTERNATIONAL CONFERENCE ON LASERS, APPLICATIONS, AND TECHNOLOGIES 2005: LASER-ASSISTED MICRO- AND NANOTECHNOLOGIES, 2006, 6161
[47] Electrical Properties of Multilayer Graphene Interconnects Prepared by Chemical Vapor Deposition
Katagiri, Masayuki
Miyazaki, Hisao
Yamazaki, Yuichi
Zhang, Li
Matsumoto, Takashi
Wada, Makoto
Kajita, Akihiro
Sakai, Tadashi
PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2013,
[48] Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs
Vogel, Eric M.
Sonnet, A. M.
Galatage, R. V.
Milojevic, M.
Hinkle, C. L.
Wallace, R. M.
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 209 - 219
[49] Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics
Pan, Tung-Ming
Yen, Li-Chen
Su, Sheng-Han
APPLIED SURFACE SCIENCE, 2009, 256 (05) : 1534 - 1537
[50] Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition
Hussain, Sajjad
Iqbal, Muhmmad Waqas
Park, Jaehyun
Ahmad, Muneer
Singh, Jai
Eom, Jonghwa
Jung, Jongwan
NANOSCALE RESEARCH LETTERS, 2014, 9

← 1 2 3 4 5 →