Effect of nitrogen on electrical and physical properties of polyatomic layer chemical vapor deposition HfSxOy gate dielectrics

被引：13

作者：

Punchaipetch, P

Okamoto, T

Nakamura, H

Uraoka, Y

Fuyuki, T

Horii, S

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Hitachi Kokusai Elect Inc, Semicond Equipment Syst Lab, Toyama 9392393, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 11B期

关键词：

Hf silicate; nitride Hf silicate; high-kappa gate oxides; polyatomic layer chemical vapor deposition method;

D O I：

10.1143/JJAP.43.7815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of nitrogen incorporation on polyatomic layer chemical vapor deposition (PLCVD) hafnium silicate (HfSixOy) films was investigated. The physical and electrical properties of nitride hafnium silicate (HfSixOyNz) and HfSixOy dielectric films are reported. X-ray photoelectron spectroscopy (XPS) was used to check chemical compositions, nitrogen profile, band gap, and band offset of the HfSixOy and HfSixOyNz films. The nitrogen incorporation results in decreases in the band gap and band offset of the HfSixOy sample. The nitrogen profile obtained by secondary ion mass spectroscopy (SIMS) shows a gradient decrease from the surface to the interface. The prepared HfSixOy and HfSixOyNz films have reasonable electrical performance.

引用

页码：7815 / 7820

页数：6

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