Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection

被引：5
|
作者：
Peng, Peng-Chun [1 ]
Lan, Ruei-Long [1 ]
Wu, Fang-Ming [2 ,3 ]
Lin, Gray [4 ]
Lin, Chun-Ting [5 ]
Chen, Jason [2 ,3 ]
Lin, Gong-Ru [6 ,7 ]
Chi, Sien [8 ]
Kuo, Hao-Chung [2 ,3 ]
Chi, Jim Y. [9 ,10 ]
机构：
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan
[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
[5] Natl Chiao Tung Univ, Inst Photon Syst, Tainan 711, Taiwan
[6] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10764, Taiwan
[7] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[8] Yuan Ze Univ, Dept Electroopt Engn, Chungli, Taiwan
[9] Natl Dong Hwa Univ, Inst Optoelect Engn, Hualien, Taiwan
[10] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 03期
关键词：
Quantum dots (QDs); vertical-cavity surface-emitting lasers (VCSELs);
D O I：
10.1109/LPT.2009.2037332
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This investigation explores experimentally the optical characteristics of long-wavelength quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The InAs QD VCSEL, fabricated on a GaAs substrate, is grown by molecular beam epitaxy with fully doped distributed Bragg reflectors. The optical characteristics of QD VCSEL without and with light injection are studied in detail. The QD VCSEL has the potential to be used in all-optical signal processing systems.
引用
收藏
页码：179 / 181
页数：3
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