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Is Sub-10nm Thick 3D-Topological Insulator Good for the Local Electrical Interconnects?

被引：0
|
作者：
Gupta, Gaurav [1 ]
Jalil, Mansoor Bin Abdul [1 ]
Liang, Gengchiau [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2013年
关键词：
BI2SE3; SURFACE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We examine the feasibility of using sub-10 nm thick 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport via NEGF formalism. We found that because of phonons Bi2Se3 3D-TI may not be that promising a material to replace Cu for interconnects.
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页数：4
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