Tuning the field emission properties of AlN nanocones by doping

被引:25
|
作者
Wu, Qiang [1 ]
Liu, Ning [1 ]
Zhang, Yongliang [1 ]
Qian, Weijin [1 ]
Wang, Xizhang [1 ]
Hu, Zheng [1 ]
机构
[1] Nanjing Univ, Sch Chem & Chem Engn, Key Lab Mesoscop Chem MOE, Nanjing 210093, Jiangsu, Peoples R China
关键词
SI-DOPED ALN; III-V-SEMICONDUCTORS; CARBON NANOTUBES; THERMAL-CONDUCTIVITY; ELECTRON-AFFINITY; THIN-FILMS; NITRIDE; LUMINESCENCE; GROWTH; ARRAYS;
D O I
10.1039/c4tc02091j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Patterned arrays of Si- or Mg-doped AlN nanocones were synthesized via chemical vapor deposition. The field emission properties of the AlN nanocones were enhanced with Si-doping but deteriorated with Mg-doping, which demonstrated the great potential of doping in tuning the properties of field emitters.
引用
收藏
页码:1113 / 1117
页数:5
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