Low-Temperature Growth and Field Emission Property of AlN Nanocones

被引：0
|
作者：
Pei Xiao-Zhu [1 ]
Lai Hong-Wei [1 ]
Zhang Yong-Liang [1 ]
Cai Jing [1 ]
Wu Qiang [1 ]
Wang Xi-Zhang [1 ]
机构：
[1] Nanjing Univ, Sch Chem & Chem Engn, Minist Educ, Key Lab Mesoscop Chem, Nanjing 210093, Jiangsu, Peoples R China
来源：
CHINESE JOURNAL OF INORGANIC CHEMISTRY | 2014年 / 30卷 / 07期
关键词：
AlN; low temperature growth; chemical vapor deposition; field emission; nanocones; LIQUID-SOLID GROWTH; CARBON NANOTUBES; ARRAYS; NANOSTRUCTURES; ROUTE;
D O I：
暂无
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The preparation of AlN nanostructures via the chemical reaction between AlCl3 and NH3 at temperature below 600 degrees C was examined, and AlN nanocones have been obtained at 500 degrees C while no nitride product could be formed at 480 degrees C. Field emission measurements show that the AlN nanocones prepared in the temperature range of 500 similar to 600 degrees C exhibit turn-on fields of 14.2 similar to 20 V center dot mu m(-1) which decreases with the elevation of growth temperature. This implies that the AlN nanocones can be gown at lower temperature for field emitters.
引用
收藏
页码：1719 / 1724
页数：6
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