Tuning the field emission properties of AlN nanocones by doping

被引：25

作者：

Wu, Qiang ^{[1
]}

Liu, Ning ^{[1
]}

Zhang, Yongliang ^{[1
]}

Qian, Weijin ^{[1
]}

Wang, Xizhang ^{[1
]}

Hu, Zheng ^{[1
]}

机构：

[1] Nanjing Univ, Sch Chem & Chem Engn, Key Lab Mesoscop Chem MOE, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 05期

关键词：

SI-DOPED ALN; III-V-SEMICONDUCTORS; CARBON NANOTUBES; THERMAL-CONDUCTIVITY; ELECTRON-AFFINITY; THIN-FILMS; NITRIDE; LUMINESCENCE; GROWTH; ARRAYS;

D O I：

10.1039/c4tc02091j

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Patterned arrays of Si- or Mg-doped AlN nanocones were synthesized via chemical vapor deposition. The field emission properties of the AlN nanocones were enhanced with Si-doping but deteriorated with Mg-doping, which demonstrated the great potential of doping in tuning the properties of field emitters.

引用

页码：1113 / 1117

页数：5

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