Temperature dependence of noise characteristics in the PIN hydrogenated amorphous silicon switching diodes

被引：0

作者：

Balco, P ^{[1
]}

Peransin, JM ^{[1
]}

Orsal, B ^{[1
]}

Ducourant, T ^{[1
]}

机构：

[1] USTL 2, URA 391, Ctr Elect & Microoptoelect Montpellier, F-34095 Montpellier 05, France

来源：

NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年

关键词：

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

This paper presents measurements and analysis on the temperature dependencies of the hydrogenated amorphous silicon switching diodes PIN characteristics. The V-I and noise curves are studied in the temperature range from 223K to 343K. The noise investigation versus temperature is realized at constant current crossing the structure. From experimental features the magnitude of the band activation energy and the variation of the carrier mobility are calculated. Noise spectra are attributed to trapping noise in the presence of space charge limited flows. The trapping levels determined from the slope of the time constants versus 1/T at constant current, are attributed to tail states contributing significantly to conduction effect in a-Si:H.

引用

页码：429 / 433

页数：5

共 50 条

[41] Temperature dependence of the optically induced production and annealing of silicon dangling bonds in hydrogenated amorphous silicon
Schultz, NA
Taylor, PC
PHYSICAL REVIEW B, 2002, 65 (23):
[42] High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films
Stuchlikova, The Ha
Stuchlik, Jiri
Remes, Zdenek
Taylor, Andrew
Mortet, Vincent
Ashcheulov, Petr
Gregora, Ivan
Krivyakin, Grigoriy
Volodin, Vladimir
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (06):
[43] Transient forward bias switching behaviour of amorphous pin diodes
Schmid, G
Bernhard, N
Schubert, MB
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 206 - 209
[44] TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells
Chang, S. T.
Tang, M.
He, R. Y.
Wang, W. -C.
Pei, Z.
Kung, C. -Y.
THIN SOLID FILMS, 2010, 518 : S250 - S254
[45] Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material:: Hydrogenated amorphous silicon
Abtew, T. A.
Zhang, Mingliang
Drabold, D. A.
PHYSICAL REVIEW B, 2007, 76 (04)
[46] DARK CURRENT-VOLTAGE CHARACTERISTICS OF TRANSVERSE ASYMMETRIC HYDROGENATED AMORPHOUS-SILICON DIODES
MARTINS, R
FORTUNATO, E
JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 3481 - 3487
[47] Temperature dependence of hot-electron-induced electroluminescence from hydrogenated amorphous silicon
Toyama, T
Matsui, T
Okamoto, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A): : 2474 - 2475
[48] Temperature dependence of hot-electron-induced electroluminescence from hydrogenated amorphous silicon
Toyama, T.
Matsui, T.
Okamoto, H.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (5 A): : 2474 - 2475
[49] TEMPERATURE-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
CHEN, BY
WU, WH
CHEN, JR
HONG, CS
JOURNAL OF MATERIALS SCIENCE, 1995, 30 (09) : 2254 - 2256
[50] Light intensity dependence of the photoconductivity of hydrogenated amorphous silicon
Almeriouh, Y.
Bullot, J.
Cordier, P.
Gauthier, M.
Mawawa, G.
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1991, 63 (05): : 1015 - 1030

← 1 2 3 4 5 →