Temperature dependence of noise characteristics in the PIN hydrogenated amorphous silicon switching diodes

This paper presents measurements and analysis on the temperature dependencies of the hydrogenated amorphous silicon switching diodes PIN characteristics. The V-I and noise curves are studied in the temperature range from 223K to 343K. The noise investigation versus temperature is realized at constant current crossing the structure. From experimental features the magnitude of the band activation energy and the variation of the carrier mobility are calculated. Noise spectra are attributed to trapping noise in the presence of space charge limited flows. The trapping levels determined from the slope of the time constants versus 1/T at constant current, are attributed to tail states contributing significantly to conduction effect in a-Si:H.