Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed-Grown m-Plane GaN Substrate

被引：4

作者：

Chen, Jun ^{[1
]}

Yi, Wei ^{[2
]}

Ito, Shun ^{[3
]}

Sekiguchi, Takashi ^{[1
,4
]}

机构：

[1] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050047, Japan

[2] Kyoto Univ, Dept Mat Chem, Kyoto 6158510, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 14期

关键词：

cathodoluminescence; dislocations; m; -plane GaN; stacking faults; NITRIDE; POLARIZATION; LUMINESCENCE;

D O I：

10.1002/pssa.202100175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The extended defects in m-plane seed-grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal-plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high-resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I-1 BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I-2 BSFs which show varied emission energies of 3.33-3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed.

引用

页数：7

共 35 条

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