Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed-Grown m-Plane GaN Substrate

被引：4
|
作者：
Chen, Jun [1 ]
Yi, Wei [2 ]
Ito, Shun [3 ]
Sekiguchi, Takashi [1 ,4 ]
机构：
[1] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050047, Japan
[2] Kyoto Univ, Dept Mat Chem, Kyoto 6158510, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 14期
关键词：
cathodoluminescence; dislocations; m; -plane GaN; stacking faults; NITRIDE; POLARIZATION; LUMINESCENCE;
D O I：
10.1002/pssa.202100175
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The extended defects in m-plane seed-grown GaN substrate have been investigated by cathodoluminescence (CL) and transmission electron microscopy (TEM). The presence of basal-plane stacking faults (BSFs) has been confirmed in the edge part of seed growth. The luminescence features of BSFs are characterized by high-resolution CL with monochromatic image and spatially resolved spectral analysis. Most stacking faults are intrinsic I-1 BSFs with characteristic emission peak centered at 3.42 eV. There are a few intrinsic I-2 BSFs which show varied emission energies of 3.33-3.38 eV. The motion of dislocations under electron beam irradiation has also been monitored and the correlation with stacking faults is discussed.
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页数：7
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