Gate bias dependence of the substrate signal coupling effect in RF MOSFETs

被引：8

作者：

Je, MY ^{[1
]}

Shin, HC ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 03期

关键词：

CMOS RF modeling; RF MOSFET; substrate resistance; substrate signal coupling;

D O I：

10.1109/LED.2003.809530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical expressions for the Y-parameters of RF MOSFETs including the substrate signal coupling effect were systematically derived. The expressions are physically correct and simple enough to be intuitive. With the expressions, how signal coupling occurs through the substrate network of parasitics could be clearly explained in physical terms, for the first time. In particular, we focused on how substrate signal coupling makes an influence on the output admittance of an RF MOSFET as the gate bias varies. The developed theory was verified with S-parameter measurement results.

引用

页码：183 / 185

页数：3

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