Wavelength selective UV/visible metal-semiconductor-metal photodetectors

被引：6
|
作者：
Averin, S. V. [1 ]
Kuznetzov, P. I. [1 ]
Zhitov, V. A. [1 ]
Zakharov, L. Yu. [1 ]
Kotov, V. M. [1 ]
Alkeev, N. V. [1 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radioengn & Elect, Fryazino Branch, Sq Academician Vvedenski 1, Fryazino 141190, Russia
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 05期
关键词：
Metal-semiconductor-metal (MSM) diode; Heterostructure; Dark current; Spectral response; ULTRAVIOLET PHOTODETECTORS; ZNSE;
D O I：
10.1007/s11082-016-0417-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on growth, fabrication and characterization of metal-semiconductormetal (MSM) photodetectors based on periodic heterostructures with ZnCdS quantum wells separated by ZnMgS and ZnS barrier layers. Heterostructures were grown on semi-insulating GaP substrates by MOVPE. Detecting properties of the MSM-heterophotodiodes have been investigated. We observe electrically tunable spectral response of these detectors. At low bias detectors provide narrowband response at the wavelength 350 nm with FWHM = 18 nm. Increasing bias shifts maximum detector sensitivity at the wavelength 450 nm while narrowband response at 350 nm remains. Thus, a two-color detection of light emission is provided.
引用
收藏
页数：11
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