Wavelength selective UV/visible metal-semiconductor-metal photodetectors

被引：6

作者：

Averin, S. V. ^{[1
]}

Kuznetzov, P. I. ^{[1
]}

Zhitov, V. A. ^{[1
]}

Zakharov, L. Yu. ^{[1
]}

Kotov, V. M. ^{[1
]}

Alkeev, N. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Kotelnikov Inst Radioengn & Elect, Fryazino Branch, Sq Academician Vvedenski 1, Fryazino 141190, Russia

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 05期

关键词：

Metal-semiconductor-metal (MSM) diode; Heterostructure; Dark current; Spectral response; ULTRAVIOLET PHOTODETECTORS; ZNSE;

D O I：

10.1007/s11082-016-0417-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on growth, fabrication and characterization of metal-semiconductormetal (MSM) photodetectors based on periodic heterostructures with ZnCdS quantum wells separated by ZnMgS and ZnS barrier layers. Heterostructures were grown on semi-insulating GaP substrates by MOVPE. Detecting properties of the MSM-heterophotodiodes have been investigated. We observe electrically tunable spectral response of these detectors. At low bias detectors provide narrowband response at the wavelength 350 nm with FWHM = 18 nm. Increasing bias shifts maximum detector sensitivity at the wavelength 450 nm while narrowband response at 350 nm remains. Thus, a two-color detection of light emission is provided.

引用

页数：11

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