Transport properties of the two-dimensional electron gas in wide AlP quantum wells including temperature and correlation effects

被引:4
|
作者
Vo Van Tai [1 ]
Nguyen Quoc Khanh [1 ]
机构
[1] Natl Univ Ho Chi Minh City, Dept Theoret Phys, Ho Chi Minh City, Vietnam
关键词
AlP quantum wells; Magnetoresistance; Scattering time; Temperature effect; METAL-INSULATOR-TRANSITION; MAGNETIC-FIELD; MAGNETORESISTANCE; CONDUCTIVITY; ANOMALIES;
D O I
10.1016/j.physe.2014.11.015
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate the mobility, magnetoresistance and scattering time of a quasi-two-dimensional electron gas in a GaP/AlP/GaP quantum well of width L > L-c=45.7 angstrom at zero and finite temperatures. We consider the interface-roughness and impurity scattering, and study the dependence of the mobility, the resistance and scattering time ratio on the carrier density and quantum well width for different values of the impurity position and temperature using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of Gold and Marty (Phys. Rev. B. 76 (2007) 165309) [3]. We also study the correlation and multiple scattering effects on the total mobility and the critical density for a metal-insulator transition. (C) 2014 Elsevier B.V. All rights reserved.
引用
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页码:84 / 88
页数:5
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