Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells

被引:1
|
作者
Ghosh, P. K. [2 ]
Ghosal, A. [1 ]
Chattopadhyay, D. [1 ]
机构
[1] Inst Radiophys & Elect, Kolkata 700009, W Bengal, India
[2] Murshidabad Coll Engn & Technol, Berhampur 742102, Orissa, India
来源
PRAMANA-JOURNAL OF PHYSICS | 2009年 / 72卷 / 02期
关键词
CdSe quantum wells; 2D electron gas; magneto-electronic transport;
D O I
10.1007/s12043-009-0035-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found to decrease with increasing temperature and increase with increasing magnetic field in the classical region.
引用
收藏
页码:399 / 405
页数:7
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