Two-dimensional electron gas in monolayer InN quantum wells

被引:19
|
作者
Pan, W. [1 ]
Dimakis, E. [2 ]
Wang, G. T. [1 ]
Moustakas, T. D. [2 ]
Tsui, D. C. [3 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Boston Univ, Boston, MA 02215 USA
[3] Princeton Univ, Princeton, NJ 08544 USA
关键词
LIQUID-PHASE EPITAXY; GROWTH;
D O I
10.1063/1.4902916
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 x 10(15) cm(-2) (or 1.25 x 10(14) cm(-2) per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm(2)/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES. (c) 2014 AIP Publishing LLC.
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页数:4
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