Magnetic and transport properties of Ga1-xMnxAs, a new III-V diluted magnetic semiconductor

被引：0

作者：

Van Esch, A ^{[1
]}

Van Bockstal, L ^{[1
]}

De Boeck, J ^{[1
]}

Verbanck, G ^{[1
]}

Van Steenbergen, A ^{[1
]}

Bogaerts, R ^{[1
]}

Herlach, F ^{[1
]}

Borghs, G ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, B-3001 Louvain, Belgium

来源：

MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES - 1997 | 1997年 / 475卷

关键词：

D O I：

10.1557/PROC-475-463

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gal.,Mn,As is a new III-V diluted magnetic semiconductor that can be grown by MBE with Mn concentrations up to x approximate to 0.09. Below a critical temperature T-c, determined by the Mn concentration (about 50 K for x = 0.05) the material becomes ferromagnetic. This is attributed to the magnetic long-range order of Mn-hole complexes, the latter being the result of the strong antiferromagnetic interaction between the holes and Mn 3d spins. Transport and magnetic properties of the Ga1-xMnxAs system are strongly correlated. Above T-c, all samples show transport behaviour characteristic for materials near the metal insulator transition. Below T-c, resistivity decreases as the magnetic ordering sets in. When the magnetisation has reached its saturation value (below similar to 20 K), variable range hopping is the main transport mechanism. Also, a negative magnetoresistance is observed below T-c.

引用

页码：463 / 468

页数：6

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