Preparation and characterization of Fe-based III-V diluted magnetic semiconductor (Ga, Fe)As

被引：33

作者：

Haneda, S ^{[1
]}

Yamaura, M ^{[1
]}

Takatani, Y ^{[1
]}

Hara, K ^{[1
]}

Harigae, S ^{[1
]}

Munekata, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 1AB期

关键词：

III-V compound semiconductor; diluted magnetic semiconductor; iron; molecular beam epitaxy;

D O I：

10.1143/JJAP.39.L9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As, has been grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature T-s rangirig from 260-350 degrees C, Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga1-xFexAs. X-ray diffraction data have indicated that the lattice constant of Ga1-xFexAs decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.

引用

页码：L9 / L12

页数：4

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