Mechanisms of SiC formation in the ion beam synthesis of 3C-SiC layers in silicon

被引：8
|
作者：
Lindner, JKN [1 ]
Reiber, W [1 ]
Stritzker, B [1 ]
机构：
[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
ion beam synthesis; buried layers; epitaxy; precipitation;
D O I：
10.4028/www.scientific.net/MSF.264-268.215
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of buried epitaxial 3C-SiC films in Si(100) by ion beam synthesis at constant implantation temperatures between 400 and 600 degrees C is studied using RBS/channeling and TEM. The lower implantation temperatures are shown to be favourable for abrupt layer interfaces, but fully epitaxial layers are obtained only for the higher temperatures under the experimental conditions used. From a comparison of the different depth dependent structural states observed after implantation at different temperatures and observed after annealing and from Monte-Carlo simulations, conclusions are drawn on mechanisms contributing to SiC precipitate and SiC layer formation.
引用
收藏
页码：215 / 218
页数：4
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