Enhanced thermoelectric performance in copper-deficient Cu2GeSe3

被引:18
|
作者
Huang, Tianyu [1 ,3 ]
Yan, Yanci [1 ,2 ]
Peng, Kunling [1 ,2 ]
Tang, Xiaodan [2 ]
Guo, Lijie [2 ]
Wang, Ruifeng [1 ,3 ]
Lu, Xu [2 ]
Zhou, Xiaoyuan [2 ]
Wang, Guoyu [1 ,3 ]
机构
[1] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[2] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100044, Peoples R China
基金
中国国家自然科学基金;
关键词
Cu2GeSe3; Thermoelectric properties; Cu vacancies; Defects CuGe; TEMPERATURE-DEPENDENCE; POWER;
D O I
10.1016/j.jallcom.2017.06.133
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cu2GeSe3 was synthesized via a procedure without annealing step, which leads to suppressed lattice thermal conductivity via formation of more defects. However, an unexpected drop in Seebeck coefficient was also observed compared with samples with similar hole concentration, which may be related to some kind of compensation effect in Seebeck coefficient. To suppress this effect and optimize the thermoelectric performance, a series of copper- deficient samples Cu2- xGeSe3(x = 0, 0.05, 0.1, 0.2) are prepared and studied. Contrary to common knowledge, it is found that the copper deficiency decreases the hole concentration rather than increase it. An upturn in electrical conductivity curve and a bending in Seebeck coefficient curve are found in the copper- deficient samples, which may be related to bipolar effect, or to the thermal ionization of acceptors such as VCu. Finally the power factor is optimized and the peak value of zT = 0.65 is obtained at 758 K for Cu1.95GeSe(3). (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码:708 / 713
页数:6
相关论文
共 50 条
  • [31] Temperature dependence of the optical properties of manganese-doped Cu2GeSe3
    Echeverría, R
    Nieves, L
    Marcano, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 220 (01): : 285 - 288
  • [32] First-principles study on the lattice dynamics and thermodynamic properties of Cu2GeSe3
    Shao, Hezhu
    Tan, Xiaojian
    Hu, Tianqi
    Liu, Guo-Qiang
    Jiang, Jun
    Jiang, Haochuan
    EPL, 2015, 109 (04)
  • [33] A triclinic superlattice structure for the bended sphalerite unit cell of the compound Cu2GeSe3
    Omar, MS
    ARAB GULF JOURNAL OF SCIENTIFIC RESEARCH, 1997, 15 (02): : 353 - 359
  • [34] The Burstein-Moss effect in Cu2GeSe3:Co2+ single crystals
    Lee, JJ
    Yang, CS
    Park, YS
    Kim, KH
    Kim, WT
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2914 - 2916
  • [35] Thermoelectric properties of the Cu2SnSe3-Cu2GeSe3 solid solution
    Skoug, Eric J.
    Cain, Jeffrey D.
    Morelli, Donald T.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 506 (01) : 18 - 21
  • [36] Charge generation performance enhancement by size-dependent Cu2GeSe3 quantum dot-sensitized solar cells
    Liu, Zhou
    Peng, Zhuoyin
    Chent, Jianlin
    Li, Wei
    Chen, Jian
    Ren, Yanjie
    FUNCTIONAL MATERIALS LETTERS, 2019, 12 (01)
  • [37] Variable-range hopping conductivity and magnetoresistance in p-type Cu2GeSe3
    Marcano, G
    Márquez, R
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) : 1725 - 1727
  • [38] ENHANCED PULMONARY TOXICITY IN COPPER-DEFICIENT RATS EXPOSED TO HYPEROXIA
    JENKINSON, SG
    LAWRENCE, RA
    GRAFTON, WD
    GREGORY, PE
    MCKINNEY, MA
    FUNDAMENTAL AND APPLIED TOXICOLOGY, 1984, 4 (02): : 170 - 177
  • [39] Temperature induced band gap shrinkage in Cu2GeSe3: Role of electron-phonon interaction
    Sarkar, Bimal Kumar
    Verma, Ajay Singh
    Deviprasad, P. S.
    PHYSICA B-CONDENSED MATTER, 2011, 406 (14) : 2847 - 2850
  • [40] ELECTROPHYSICAL PROPERTIES OF THE SOLID-SOLUTIONS (CU2GESE3)X(CDSE)1-X
    DOVLETOV, K
    MKRTCHYAN, SA
    ZHUKOV, EG
    MELIKDZHANYAN, AG
    INORGANIC MATERIALS, 1986, 22 (03) : 436 - 437