Enhanced thermoelectric performance in copper-deficient Cu2GeSe3

被引:18
|
作者
Huang, Tianyu [1 ,3 ]
Yan, Yanci [1 ,2 ]
Peng, Kunling [1 ,2 ]
Tang, Xiaodan [2 ]
Guo, Lijie [2 ]
Wang, Ruifeng [1 ,3 ]
Lu, Xu [2 ]
Zhou, Xiaoyuan [2 ]
Wang, Guoyu [1 ,3 ]
机构
[1] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[2] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100044, Peoples R China
基金
中国国家自然科学基金;
关键词
Cu2GeSe3; Thermoelectric properties; Cu vacancies; Defects CuGe; TEMPERATURE-DEPENDENCE; POWER;
D O I
10.1016/j.jallcom.2017.06.133
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cu2GeSe3 was synthesized via a procedure without annealing step, which leads to suppressed lattice thermal conductivity via formation of more defects. However, an unexpected drop in Seebeck coefficient was also observed compared with samples with similar hole concentration, which may be related to some kind of compensation effect in Seebeck coefficient. To suppress this effect and optimize the thermoelectric performance, a series of copper- deficient samples Cu2- xGeSe3(x = 0, 0.05, 0.1, 0.2) are prepared and studied. Contrary to common knowledge, it is found that the copper deficiency decreases the hole concentration rather than increase it. An upturn in electrical conductivity curve and a bending in Seebeck coefficient curve are found in the copper- deficient samples, which may be related to bipolar effect, or to the thermal ionization of acceptors such as VCu. Finally the power factor is optimized and the peak value of zT = 0.65 is obtained at 758 K for Cu1.95GeSe(3). (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码:708 / 713
页数:6
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