Scattering Mechanisms in Arsenide Indium

被引：0
|
作者：
Saurova, Tetiana [1 ]
Bors, Victoria [1 ]
机构：
[1] Natl Tech Univ Ukraine, Igor Sikorsky Kiev Polytech Inst, Fac Elect, Dept Elect Engn, Kiev, Ukraine
来源：
2019 IEEE 39TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2019年
关键词：
indium arsenide; scattering rate; electron drift mobility;
D O I：
10.1109/elnano.2019.8783663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scattering rates of typical scattering mechanisms in indium arsenide were studied. The low-field dependence of the drift mobility of electrons vs temperature is calculated. A set of initial parameters for modeling has been proposed, which provides a satisfactory agreement of the calculated characteristics with the known results.
引用
收藏
页码：124 / 127
页数：4
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