共 50 条
- [1] RADIATIVE RECOMBINATION OF HOT CARRIERS IN INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 29 - 32
- [2] THE ANALYSIS OF INDIUM ANTIMONIDE, INDIUM ARSENIDE AND GALLIUM ARSENIDE INDUSTRIAL LABORATORY, 1958, 24 (09): : 1178 - 1179
- [3] INFRARED BIREFRINGENCE DUE TO HOT-ELECTRONS IN DEGENERATE INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 1009 - &
- [4] REFLECTIVITY AND OPTICAL CONSTANTS OF INDIUM ARSENIDE, INDIUM ANTIMONIDE, AND GALLIUM ARSENIDE PHYSICAL REVIEW, 1961, 124 (05): : 1314 - +
- [7] MOBILITY AND TEMPERATURE OF HOT-ELECTRONS IN N-TYPE INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1423 - 1424
- [9] ORIENTED GROWTH AND INDIUM ARSENIDE ON GALLIUM ARSENIDE ACTA PHYSICA AUSTRIACA, 1967, 25 (04): : 336 - &