Bias stress instability in organic transistors investigated by ac admittance measurements

被引：12
|
作者：
Di Girolamo, F. V. [1 ,2 ]
Barra, M. [1 ,2 ]
Capello, V. [2 ]
Oronzio, M. [2 ]
Romano, C. [2 ]
Cassinese, A. [1 ,2 ]
机构：
[1] Univ Naples Federico 2, CNR SPIN, I-80125 Naples, Italy
[2] Univ Naples Federico 2, Dept Phys Sci, I-80125 Naples, Italy
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 11期
关键词：
capacitance measurement; electric admittance measurement; field effect transistors; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; STABILITY; MOBILITY;
D O I：
10.1063/1.3425795
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, the bias stress effect (BSE) in organic field-effect transistors has been analyzed by an alternative experimental approach based on ac admittance (Y=G+j omega C) measurements. conductance (C) and capacitance (G) curves have been recorded as a function of frequency at different times of the bias stress experiments and simultaneously fitted through a transmission line circuit, able to separately model the conducting properties of the channel and contact regions. The determination of the time behavior of the model fitting parameters is assumed as the starting point for a quantitative analysis of the BSE occurrence. This experimental procedure clarifies that both channel resistance (R(ch)) and contact resistance (R(c)) are largely affected by the BSE, while the channel capacitance (C(ch)), related to the charge accumulation sheet, and the contact capacitance (C(c)) result almost unchanged. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425795]
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收藏
页数：6
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