Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide

被引：1

作者：

Son, Younghwan ^{[1
]}

Kim, Yoon ^{[2
]}

Kang, Myounggon ^{[3
]}

机构：

[1] Samsung Elect, Semicond Res Ctr, San 16, Hwasung, Gyeonggi Do, South Korea

[2] Pusan Natl Univ, Dept Nanoenergy Engn, Busan 609735, South Korea

[3] Korea Natl Univ Transportat, Dept Elect Engn, 50 Daehak Ro, Chungju Si, Chungbuk, South Korea

来源：

IEICE ELECTRONICS EXPRESS | 2017年 / 14卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

oxide traps; high-k; HfO2; charge pumping; SI-SIO2; INTERFACE;

D O I：

10.1587/elex.14.20170141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the simple multi-frequency charge pumping (CP) technique in conjunction with the tunneling model of trapped charges shows for profiling of the near-interface oxide traps in gate metal/high-k dielectric/ SiO2 interfacial layer stack structure. The methodological basis and the accurate model are introduced for analysis of measured multi-frequency CP data in dual-layer gate oxide. The whole models are derived from the fundamental physics and simplified method is introduced for extraction of the trap profile in the stacked gate dielectric from multi-frequency CP curves.

引用

页数：6

共 50 条

[31] Extraction of Interface Trap Density Through Synchronized Optical Charge Pumping in Gate-All-Around MOSFETs
Lee, Geon-Beom
Choi, Yang-Kyu
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (11) : 1629 - 1632
[32] A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique
Mahapatra, S
Parikh, CD
Rao, VR
Viswanathan, CR
Vasi, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) : 171 - 177
[33] Optical charge-pumping: A universal trap characterization technique for nanoscale floating body devices
Dept. Electrical Engineering, KAIST, Daejeon, Korea, Republic of
Dig Tech Pap Symp VLSI Technol, 2011, (190-191):
[34] EFFECT OF OXIDE RESISTANCE ON THE CHARACTERIZATION OF INTERFACE TRAP DENSITY IN MOS STRUCTURES
LIN, JJ
HWU, JG
SOLID-STATE ELECTRONICS, 1991, 34 (12) : 1449 - 1454
[35] NOVEL GATE VOLTAGE RAMPING TECHNIQUE FOR THE CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARGE TRAPPING PROPERTIES
TING, W
LO, GQ
KWONG, DL
ELECTRONICS LETTERS, 1990, 26 (16) : 1257 - 1259
[36] Study of the near Si-SiO2 interface trap layer using the charge pumping technique
Maneglia, Y
Bauza, D
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 135 - 138
[37] Charge pumping technique for the evaluation of plasma induced edge damage in shallow S/D extension thin gate oxide NMOSFET's
Chung, Steve S., 2000, IEEE, Piscataway, NJ, United States
[38] Reduced charge trapping in GaN MIS using gate oxide deposition technique
Sreenidhi, T.
Baskar, K.
DasGupta, A.
DasGupta, N.
ELECTRONICS LETTERS, 2009, 45 (10) : 527 - 528
[39] Dual-Layer Rotation: A Versatile Therapeutic Mammoplasty Technique
Joukainen, Sarianna
Laaksonen, Elina
Vanninen, Ritva
Kaarela, Outi
Sudah, Mazen
ANNALS OF SURGICAL ONCOLOGY, 2022, 29 (11) : 6716 - 6727
[40] Optimization of Charge Pumping Technique in Polysilicon TFTs for Geometric Effect Elimination and Trap State Density Extraction
Lu, Lei
Wang, Mingxiang
Wong, Man
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 978 - +

← 1 2 3 4 5 →