Emission characteristics of TiN-coated silicon field emitter arrays

被引：21

作者：

Kang, SY ^{[1
]}

Lee, JH ^{[1
]}

Song, YH ^{[1
]}

Kim, YT ^{[1
]}

Cho, KI ^{[1
]}

Yoo, HJ ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Semicond Technol Div, Taejon 305600, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.590222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We observed the emission characteristics and stability of TiN-coated Si field emitter arrays (FEAs) with a TIW gate structure. The TiN layer on Si tips was formed by a two-step rapid thermal nitridation process in an NH3 ambient by which a Ti layer was thermally converted to a TiN/TiSi2 bilayer. This process could suppress the formation of TiO2 on the surface and make the TiN layer thicker than a one-step process. By coating Si tips with TiN, the operating voltage of the TiN-coated Si FEAs was reduced by about 20 V compared with non-coated ones. Also, the TiN-coated Si FEAs showed thermally stable electron emission compared with non-coated ones. (C) 1998 American Vacuum Society. [S0734-211X(98)08002-0].

引用

页码：871 / 874

页数：4

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