The properties of Co-doped copper nitride films deposited by reactive magnetron co-sputtering

被引：2
|
作者：
San, Zhi-Peng [1 ]
Guo, Zhi-Wen [1 ]
Gu, Guang-Rui [1 ]
Wu, Bao-Jia [1 ]
机构：
[1] Yanbian Univ, Dept Phys, Coll Sci, Yanji, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2017年 / 179卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Magnetron co-sputtering; Co-Cu3N films; structures; magnetic properties; THIN-FILMS; CU3N FILMS; OPTICAL-PROPERTIES; THERMAL-STABILITY; GROWTH; TIN;
D O I：
10.1080/10584587.2017.1330620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Co-doped copper nitride films were successfully prepared on various substrates by reactive magnetron co-sputtering. We study the surface chemicals, structures, electrical resistivity, optical transmittance and magnetic properties of Co-doped Cu3N films. X-ray diffraction patterns show that the Co-doped films more readily exhibit diffraction peaks on different orientations when deposited on ITO glass substrates. The resistivity of the films significantly decreases from 5730 <bold>cm to </bold>225 <bold>cm with increasing content of Co</bold>. Vibrating sample magnetometer tests show that magnetic films were obtained via Co doping.
引用
收藏
页码：63 / 76
页数：14
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