Properties of ITO:Zr films deposited by co-sputtering

被引：1
|
作者：
ZHANG Bo1
机构：
来源：
Optoelectronics Letters | 2008年 / 02期
关键词：
ITO; Properties of ITO; Zr;
D O I：
暂无
中图分类号：
O484.1 [薄膜的生长、结构和外延];
学科分类号：
080501 ; 1406 ;
摘要：
ITO:Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO:Zr films. ITO:Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO:Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.
引用
收藏
页码：137 / 139
页数：3
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