Fully Transparent Quantum Dot Light-Emitting Diode with a Laminated Top Graphene Anode

被引:40
|
作者
Yao, Li [1 ]
Fang, Xin [1 ]
Gu, Wei [2 ,3 ]
Zhai, Wenhao [1 ]
Wan, Yi [1 ]
Xie, Xixi [1 ]
Xu, Wanjin [1 ]
Pi, Xiaodong [2 ,3 ]
Ran, Guangzhao [1 ]
Qin, Guogang [1 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Microscop Phys, Beijing 100871, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene; transparent top electrode; lamination; quantum dots; light emitting diodes; SINGLE-LAYER GRAPHENE; EFFICIENT; DEVICE; BRIGHT; ELECTRODES; FILMS;
D O I
10.1021/acsami.7b02026
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A new method to employ graphene as top electrode was introduced, and based on that, fully transparent quantum dot light-emitting diodes (T-QLEDs) were successfully fabricated through a lamination process. We adopted the widely used wet transfer method to transfer bilayer graphene (BG) on polydimethylsiloxane/polyethylene terephthalate (PDMS/PET) substrate. The sheet resistance of graphene reduced to,,540 WO through transferring BG for 3 times on the PDMS/PET. The T-QLED has an inverted device structure of glass/indium tin oxide (ITO)/ZnO nanoparticles/(CdSSe/ZnS quantum dots (QDs))/1,1-bis[(di-4tolylamitio)phenyl] cyclohexane (TAPC)/MoO3/graphene/ PDMS/PET. The graphene anode on PDMS/PET substrate can be directly laminated on the MoO3/TAPC/(CdSSe/ZnS QDs)/ZnO nanoparticles/ITO/glass, which relied on the van der Waals interaction between the graphene/PDMS and the MoO3. The transmittance of the T-QLED is 79.4% at its main electroluminescence peak wavelength of 622 run.
引用
下载
收藏
页码:24005 / 24010
页数:6
相关论文
共 50 条
  • [31] Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers
    Leck, Kheng Swee
    Divayana, Yoga
    Zhao, Dewei
    Yang, Xuyong
    Abiyasa, Agus Putu
    Mutlugun, Evren
    Gao, Yuan
    Liu, Shuwei
    Tan, Swee Tiam
    Sun, Xiao Wei
    Demir, Hilmi Volkan
    ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (14) : 6535 - 6540
  • [32] Implementation of graphene multilayer electrodes in quantum dot light-emitting devices
    Wolff, Svenja
    Jansen, Dennis
    Terlinden, Hendrik
    Kelestemur, Yusuf
    Mertin, Wolfgang
    Demir, Hilmi Volkan
    Bacher, Gerd
    Nannen, Ekaterina
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 120 (03): : 1197 - 1203
  • [33] Implementation of graphene multilayer electrodes in quantum dot light-emitting devices
    Svenja Wolff
    Dennis Jansen
    Hendrik Terlinden
    Yusuf Kelestemur
    Wolfgang Mertin
    Hilmi Volkan Demir
    Gerd Bacher
    Ekaterina Nannen
    Applied Physics A, 2015, 120 : 1197 - 1203
  • [34] Quantum dot light-emitting devices
    Talapin, Dmitri V.
    Steckel, Jonathan
    MRS BULLETIN, 2013, 38 (09) : 685 - 695
  • [35] Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light-Emitting Diodes
    Choi, Moon Kee
    Yang, Jiwoong
    Kim, Dong Chan
    Dai, Zhaohe
    Kim, Junhee
    Seung, Hyojin
    Kale, Vinayak S.
    Sung, Sae Jin
    Park, Chong Rae
    Lu, Nanshu
    Hyeon, Taeghwan
    Kim, Dae-Hyeong
    ADVANCED MATERIALS, 2018, 30 (01)
  • [36] Efficient transparent quantum-dot light-emitting diodes with an inverted architecture
    Zhang, Nan
    Ding, Shihao
    Wang, Kai
    Lyu, Quan
    Sun, Wei Xiao
    OPTICAL MATERIALS EXPRESS, 2021, 11 (07) : 2145 - 2152
  • [37] Quantum dot light-emitting diodes with an Al-doped ZnO anode
    Jiang, Xiaohong
    Liu, Guo
    Tang, Liping
    Wang, Anzhen
    Tian, Yu
    Wang, Aqiang
    Du, Zuliang
    NANOTECHNOLOGY, 2020, 31 (25)
  • [38] Investigation of heavily doped silicon as an anode material for top-emitting organic light-emitting diode
    Chan, KW
    Wan, CH
    Kwok, HS
    Wong, M
    PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 216 - 219
  • [39] Anode material based on SWCNT for infrared quantum dot light-emitting devices
    Ahmed E. Farghal
    S. Wageh
    Atef Abou El-Azm
    Optical and Quantum Electronics, 2010, 42 : 263 - 276
  • [40] Anode material based on SWCNT for infrared quantum dot light-emitting devices
    Farghal, Ahmed E.
    Wageh, S.
    Abou El-Azm, Atef
    OPTICAL AND QUANTUM ELECTRONICS, 2010, 42 (04) : 263 - 276